Graphene Induced High Thermoelectric Performance in ZnO/Graphene Heterostructure

Despite the low thermoelectric (TE) efficiency of graphene, its flexibility features are attractive for flexible and wearable next-generation applications. So, it will be highly desirable to synthesize graphene-based high TE material. Hence, possibility significant enhancement performance in ZnO/graphene heterostructure is investigated. The ZnO monolayer has a direct band gap 3.3 eV, while 5 meV found. highest ZT ≈ 2.4 n-doped at 500 K obtained, whereas shows 1.3 700 K. Particularly, this giant found even carrier concentration (≈1011 cm−2). Besides, also displays 0.8 300 with very (≈1010 This outstanding originates from coefficient advantages each layer; electrical conductivity graphene Seebeck incorporate reduced thermal heterostructure. findings stimulate further studies confirm results as well development generators based on Internet things